AP2625Y
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Low On-resistance
▼
Surface Mount Package
G1
S1
G2
D1
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
BV
DSS
R
DS(ON)
I
D
-30V
135mΩ
- 2.3A
S2
Description
D2
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
S1
D1
G2
S2
G1
SOT-26
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±12
-2.3
-2
-20
1.2
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
110
Unit
℃/W
Data and specifications subject to change without notice
200611041
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
