AP2622GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Small Package Outline
▼
Surface Mount Package
▼
RoHS Compliant
S1
G1
G2
D1
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
BV
DSS
R
DS(ON)
I
D
50V
1.8Ω
520mA
S2
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
D2
S1
D1
G2
S2
SOT-26
G1
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current , V
GS
@ 10V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
50
±20
520
410
1.5
0.8
0.006
-55 to 150
-55 to 150
Units
V
V
mA
mA
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
150
Unit
℃/W
Data and specifications subject to change without notice
200624051-1/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
