AP40T03GS/P
90
75
T
C
=25
o
C
I
D
, Drain Current (A)
10V
8 .0V
I
D
, Drain Current (A)
T
C
=150 C
o
10V
8 .0V
60
6 .0V
50
6 .0V
30
25
V
G
= 4. 0V
V
G
=4.0V
0
0.0
1.0
2.0
3.0
4.0
0
0.0
1.0
2.0
3.0
4.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.0
I
D
=14A
T
C
=25
℃
50
I
D
=18A
V
G
=10V
Normalized R
DS(ON)
1.4
R
DS(ON)
(m
Ω
)
30
0.8
10
0
5
10
15
0.2
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
100
2.0
10
T
j
=150
o
C
I
S
(A)
T
j
=25
o
C
V
GS(th)
(V)
1.5
1
1.0
0.1
0
0.4
0.8
1.2
1.6
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
