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AP4407GM 参数 Datasheet PDF下载

AP4407GM图片预览
型号: AP4407GM
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 75 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP4407GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
D
D
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G
S
S
S
-30V
14mΩ
-10.7A
SO-8
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±
25
-10.7
-8.6
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
50
Unit
℃/W
Data and specifications subject to change without notice
201125031