AP4501SSD
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching
D1
D1
D2
D2
N with Schottky AND P-CHANNEL
ENHANCEMENT MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
G2
30V
36mΩ
5.3A
-30V
60mΩ
-4.2A
K
PDIP-8
G1
S1/A
S2
P-CH BV
DSS
R
DS(ON)
I
D
D1
Description
The Advanced Power MOSFETs from APEC provide the
design with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
AP4501SSD included N , P channel enhancement mode
power MOSFET and Shottky diode.
G1
D2
G2
S1
A
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
30
±20
5.3
4.3
40
2
0.016
-55 to 150
-55 to 125
P-channel
-30
±20
-4.2
-3.5
-30
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200221031
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
