AP4501GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
D2
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
G2
S1
S2
G1
30V
28mΩ
7A
-30V
50mΩ
-5.3A
▼
Low On-resistance
▼
Fast Switching Performance
D1
D1
P-CH BV
DSS
R
DS(ON)
I
D
SO-8
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
D1
D2
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
30
±20
7.0
5.8
20
2
0.016
-55 to 150
-55 to 150
Rating
N-channel
P-channel
-30
±20
-5.3
-4.7
-20
V
V
A
A
A
W
W/℃
℃
℃
Units
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
200805264