AP4503AGM
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
D2
D2
D1
D1
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH
BV
DSS
R
DS(ON)
I
D
30V
28mΩ
6.9A
-30V
36mΩ
-6.3A
▼
Low On-resistance
▼
Fast Switching Performance
G2
S2
SO-8
S1
G1
P-CH
BV
DSS
R
DS(ON)
I
D
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
D1
D2
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
3
Rating
N-channel
30
±20
6.9
5.5
20
2
-55 to 150
-55 to 150
P-channel
-30
±20
-6.3
-5
-20
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
201126071
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
