AP4513GH
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Thermal Performance
▼
Fast Switching Performance
S1
G1
S2
G2
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
P-CH BV
DSS
R
DS(ON)
I
D
35V
42mΩ
10A
-35V
75mΩ
-8A
TO-252-4L
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
3
Rating
N-channel
35
±20
10
6
50
7.8
0.063
-55 to 150
-55 to 150
P-channel
-35
±20
-8
-5
-50
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
3
3
Value
Max.
Max.
16
110
Units
℃/W
℃/W
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
200929041