AP4511GD
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Fast Switching Speed
▼
PDIP-8 Package
G2
D1
D1
D2
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
P-CH BV
DSS
R
DS(ON)
I
D
35V
25mΩ
7A
-35V
40mΩ
-6.1A
PDIP-8
S1
S2
G1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
35
±20
7
5.7
30
2.0
0.016
-55 to 150
-55 to 150
P-channel
-35
±20
-6.1
-5
-30
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
200805262
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
