AP4513GD
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Fast Switching Speed
▼
PDIP-8 Package
▼
RoHS Compliant
PDIP-8
G1
S1
G2
S2
D1
D1
D2
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
P-CH BV
DSS
R
DS(ON)
I
D
35V
36mΩ
5.8A
-35V
68mΩ
-4.3A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
4
Avalanche Current
Repetitive Avalanche Energy
1
Storage Temperature Range
Operating Junction Temperature Range
12.5
5
0.05
-55 to 150
-55 to 150
3
Rating
N-channel
35
±20
5.8
4.7
20
2
0.016
12.5
-5
0.05
P-channel
-35
±20
-4.3
-3.4
-20
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200615051-1/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
