AP4525GEH-A
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Thermal Performance
▼
Fast Switching Performance
S1
G1
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
40V
26mΩ
8.3A
-40V
40mΩ
-7A
S2
G2
P-CH BV
DSS
TO-252-4L
R
DS(ON)
I
D
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D1
G1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
40
±16
8.3
6.6
50
3.125
0.025
-55 to 150
-55 to 150
P-channel
-40
±16
-7.0
-5.6
-50
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
3
Value
Max.
Max.
8
40
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200627071-1/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
