AP4565M
P-Channel
f=1.0MHz
16
10000
-V
GS
, Gate to Source Voltage (V)
I
D
=-6A
V
DS
=-32V
12
8
4
C (pF)
C
iss
1000
C
oss
C
rss
0
0.0
10.0
20.0
30.0
40.0
50.0
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
100us
1ms
Normalized Thermal Response (R
thja
)
0.2
0.1
0.1
0.05
-I
D
(A)
1
10ms
100ms
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135 C/W
o
0.1
T
A
=25 C
Single Pulse
0.01
o
1s
DC
1
10
100
0.001
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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