AP4563GH
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH
BV
DSS
R
DS(ON)
I
D
BV
DSS
R
DS(ON)
I
D
D1
40V
30mΩ
30A
-40V
36mΩ
-27A
▼
Good Thermal Performance
▼
Fast Switching Performance
▼
RoHS Compliant
S1
G1
S2
P-CH
G2
Description
S1
TO-252-4L
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
40
±20
30
19
100
39
0.31
-55 to 150
-55 to 150
Rating
N-channel
P-channel
-40
±20
-27
-17
-100
-41.7
-0.34
V
V
A
A
A
W
W/℃
℃
℃
Units
Thermal Data
Symbol
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-case
3
3
3
Value
Max.
Max.
Max.
3.2
3
110
Units
℃/W
℃/W
℃/W
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
200617051-1/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
