AP4565GM
N-Channel
140
120
100
80
60
40
20
0
T A = 150 o
C
T A = 25 o C
120
10V
10V
100
80
60
40
20
0
7.0V
7.0V
5.0V
4.5V
5.0V
4.5V
VG =3.0V
VG =3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
27
23
19
15
1.6
1.4
1.2
1.0
0.8
0.6
I D = 5 A
I D = 7 A
T
A =25 o C
VG =10V
Ω
Ω
Ω
Ω
-50
0
50
100
150
3
5
7
9
11
VGS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
6
4
2
0
1.5
1.3
1.1
0.9
0.7
0.5
T j =150 o
C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j , Junction Temperature ( o C)
VSD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
