AP4575GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Performance
D2
D1 D2
D1 D1
D1
D2
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
G2
G2
S2
S2
S1 G1
G1
S1
60V
36mΩ
6A
-60V
72mΩ
-4.2A
SO-8
SO-8
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
I
D
P-CH BV
DSS
R
DS(ON)
I
D
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
60
±20
6
4.7
30
2.0
0.016
-55 to 150
-55 to 150
Rating
N-channel
P-channel
-60
±20
-4.2
-3.3
-30
V
V
A
A
A
W
W/℃
℃
℃
Units
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
62.5
Unit
℃/W
Data and specifications subject to change without notice
200607041
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
