AP4800AGM
40
40
T
A
=25
o
C
I
D
, Drain Current (A)
30
20
V
G
= 3.0 V
I
D
, Drain Current (A)
10V
7.0 V
5.0 V
4.5 V
T
A
= 150 C
o
30
10V
7.0 V
5.0 V
4.5 V
20
V
G
= 3.0 V
10
10
0
0
1
2
3
4
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
18
1.6
I
D
=7A
T
A
=25
℃
16
I
D
=9A
V
G
=10V
1.4
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(m
Ω
)
14
1.2
12
1.0
10
0.8
8
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
10
8
Normalized V
GS(th)
(V)
1.2
6
I
S
(A)
T
j
=150 C
4
o
T
j
=25 C
o
1.0
0.8
2
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
