AP4800GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Fast Switching
▼
Simple Drive Requirement
D
D
D
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
G
25V
18mΩ
9A
I
D
SO-8
S
S
S
Description
D
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
G
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
3
Rating
25
±
20
9
7
40
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Continuous Drain Current
3
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
50
Unit
℃/W
Data and specifications subject to change without notice
20020430
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
