AP72T02GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
25V
9mΩ
62A
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP72T02GJ)
are available for low-profile applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
25
± 20
62
44
190
60
0.4
29
24
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
.
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance,
Junction-ambient
(PCB mount)
4
Value
2.5
62.5
110
Units
℃/W
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1
200807177
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
