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AP75T10S 参数 Datasheet PDF下载

AP75T10S图片预览
型号: AP75T10S
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强模式 [N-CHANNEL ENHANCEMENT MODE]
分类和应用:
文件页数/大小: 4 页 / 111 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP75T10S/P
Advanced Power
Electronics Corp.
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
100V
15mΩ
72A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP75T10P) are available for low-profile applications.
G
D
G D
S
TO-263(S)
TO-220(P)
S
Units
V
V
A
A
A
W
W/℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
±20
72
45
260
138
1.11
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.9
62
Units
℃/W
℃/W