AP80N30W
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
High Speed Switching
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
300V
66mΩ
88A
Description
AP80N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
D
S
TO-3P
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
DM
I
DR
I
DR(PULSE)
P
D
@T
C
=25℃
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current
1
Total Power Dissipation
Avalanche Current
3
Single Pulse Avalanche Energy
3
Storage Temperature Range
Operating Junction Temperature
Rating
300
±30
88
270
88
270
150
30
45
-55 to 150
150
Units
V
V
A
A
A
A
W
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.833
40
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200805132
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
