AP90T03GR
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Lower On- resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
4mΩ
75A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@Tc=25℃
I
D
@Tc=100℃
I
DM
P
D
@Tc=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
75
63
350
96
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.3
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200120041