欢迎访问ic37.com |
会员登录 免费注册
发布采购

AP90T03GR 参数 Datasheet PDF下载

AP90T03GR图片预览
型号: AP90T03GR
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 4 页 / 72 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP90T03GR的Datasheet PDF文件第2页浏览型号AP90T03GR的Datasheet PDF文件第3页浏览型号AP90T03GR的Datasheet PDF文件第4页  
AP90T03GR
Pb Free Plating Product
Advanced Power
Electronics Corp.
Lower On- resistance
Simple Drive Requirement
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
4mΩ
75A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@Tc=25℃
I
D
@Tc=100℃
I
DM
P
D
@Tc=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
75
63
350
96
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.3
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200120041