AP9435GK
30
30
25
T
A
=25
o
C
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
20
-10V
-8.0V
-6.0V
-5.0V
V
G
=-4.0V
25
T
A
=150 C
o
20
-10V
-8.0V
-6.0V
-5.0V
V
G
=-4.0V
15
15
10
10
5
5
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
7
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
1.8
100
I
D
=5.3A
T
A
=25
℃
Normalized R
DS(ON)
1.6
I
D
=-5.3A
V
G
=10V
90
1.4
R
DS(ON)
(m
Ω
)
80
70
1.2
60
1.0
50
0.8
40
30
3
4
5
6
7
8
9
10
11
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
100.00
10.00
3
T
j
=150
o
C
-I
S
(A)
1.00
T
j
=25 C
o
-V
GS(th)
(V)
2
0.10
1
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
