AP9452GG
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Lower gate charge
▼
Capable of 2.5V gate drive
▼
Single Drive Requirement
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
50mΩ
4A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
S
SOT-89
D
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
3
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
20
±16
4
2.5
12
1.25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
100
Unit
℃/W
Data and specifications subject to change without notice
201224031
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
