AP9475M
f=1.0MHz
14
10000
I
D
=6A
12
V
GS
, Gate to Source Voltage (V)
10
V
DS
= 30 V
V
DS
= 38 V
V
DS
= 48 V
C (pF)
1000
C
iss
8
6
4
2
C
oss
C
rss
100
0
10
20
30
40
50
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
10
1ms
I
D
(A)
1
0.1
0.1
0.05
10ms
100ms
0.1
0.02
0.01
P
DM
0.01
t
T
Single Pulse
T
A
=25
o
C
Single Pulse
0.01
0.1
1
10
1s
DC
100
1000
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 125℃/W
℃
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
