AP9916H/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
18
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
18
-
-
-
17.5
1.2
7.9
7.3
98
25.6
98
527
258
112
Max. Units
-
-
25
40
1
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=18V, V
GS
=0V
V
DS
=18V ,V
GS
=0V
V
GS
= ± 12V
I
D
=18A
V
DS
=18V
V
GS
=5V
V
DS
=10V
I
D
=18A
R
G
=3.3Ω,V
GS
=5V
R
D
=0.56Ω
V
GS
=0V
V
DS
=18V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.3V
T
j
=25℃, I
S
=35A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
35
90
1.3
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
