AP9926GO
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low on-resistance
▼
Capable of 2.5V gate drive
▼
Low drive current
▼
Surface mount package
D2
S2
G2
S2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S1
D1
G1
S1
20V
28mΩ
4.6A
TSSOP-8
I
D
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
±
8
4.6
3.7
20
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
125
Unit
℃/W
Data and specifications subject to change without notice
20071902
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
