AP9930M
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Full Bridge Application on
LCD Monitor Inverter
SO-8
N1G
P1S/P2S
P1G
P2G
N2D/P2D
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
N2G
N1S/N2S
N1D/P1D
30V
33mΩ
6.3A
-30V
55mΩ
-5.1A
I
D
P-CH BV
DSS
R
DS(ON)
I
D
P1S
P1G
P2S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N1G
P2G
P1N1D
P2N2D
N2G
N1S
N2S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
30
± 25
6.3
4.2
20
2.0
0.016
Rating
N-channel
Units
-30
±25
-5.1
-3.4
-20
V
V
A
A
A
W
W/℃
℃
℃
P-channel
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200612032
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
