AP9972GR
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Single Drive Requirement
▼
Surface Mount Package
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
18mΩ
60A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Avalanche Current
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
±25
60
38
230
89
0.7
30
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.4
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200218051