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AP9972GR 参数 Datasheet PDF下载

AP9972GR图片预览
型号: AP9972GR
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 4 页 / 73 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP9972GR
Pb Free Plating Product
Advanced Power
Electronics Corp.
Low Gate Charge
Single Drive Requirement
Surface Mount Package
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
18mΩ
60A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Avalanche Current
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
±25
60
38
230
89
0.7
30
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
A
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.4
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200218051