AP9973H/J
45
32
40
o
T
C
=25 C
35
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
28
T
C
=150
o
C
24
10V
7.0V
5.0V
4.5V
20
25
16
20
12
15
8
V
G
=3.0V
10
V
G
=3.0V
4
5
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
2.5
I
D
=9A
85
I
D
=9A
2.0
T
C
=25
o
C
Normalized R
DS(ON)
V
G
=10V
R
DS(ON)
(m
Ω
)
80
1.5
75
1.0
70
0.5
65
0.0
3
5
7
9
11
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
14
12
2
10
8
I
S
(A)
o
T
j
=150 C
6
T
j
=25 C
o
V
GS(th)
(V)
1.4
1.5
1
4
0.5
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
