AAT3215
150mA CMOS High Performance LDO
Electrical Characteristics
VIN = VOUT(NOM) + 1V, IOUT = 1mA, COUT = 2.2µF, CIN = 1µF, CBYP = 10nF, TA = -40°C to +85°C, unless other-
wise noted. Typical values are TA = 25°C.
Symbol
Description
Conditions
Min Typ Max Units
I
OUT = 1mA to
TA = 25°C
-1.5
1.5
2.5
VOUT
Output Voltage Tolerance
%
150mA
TA = -40 to 85°C -2.5
150
IOUT
VDO
ISC
IQ
Output Current
VOUT > 1.2V
IOUT = 150mA
VOUT < 0.4V
mA
mV
mA
µA
Dropout Voltage1
Short-Circuit Current
Ground Current
Shutdown Current
140 250
600
VIN = 5V, No Load, EN = VIN
VIN = 5V, EN = 0V
95
150
1
ISD
µA
ΔVOUT/VOUT*ΔVIN Line Regulation
VIN = VOUT + 1 to 5.5V
0.07
%/V
mV
V
IN = VOUT + 1V to VOUT + 2V,
1
ΔVOUT(line)
Dynamic Line Regulation
IOUT = 150mA, TR/TF = 2µs
ΔVOUT(load)
VEN(L)
Dynamic Load Regulation
Enable Threshold Low
Enable Threshold High
Leakage Current on
Enable Pin
IOUT = 1mA to 150mA, TR < 5µs
30
mV
V
0.6
1
VEN(H)
1.5
V
IEN
PSRR
TSD
VEN = 5V
µA
dB
°C
1kHz
70
50
47
I
OUT = 10mA,
Power Supply Rejection Ratio
10kHz
1MHz
CBYP = 10nF
Over-Temperature Shutdown
Threshold
150
Over-Temperature Shutdown
Hysteresis
THYS
eN
10
45
22
°C
Output Noise
µVrms
ppm/°C
Output Voltage Temperature
Coefficient
TC
1. VDO is defined as VIN - VOUT when VOUT is 98% of nominal.
4
3215.2006.05.1.6