20V P-Channel Power MOSFET
General Description
The AAT7357 is a low threshold dual P-channel
MOSFET designed for the battery, cell phone, and
PDA markets. Using AnalogicTech's ultra-high-
density MOSFET process and space-saving,
small-outline, J-lead package, performance superi-
or to that normally found in a TSSOP-8 footprint
has been squeezed into the footprint of a
TSOPJW-8 package.
AAT7357
Features
•
•
•
Drain-Source Voltage (max): -20V
Contiunous Drain Current
1
(max) = -5A @ 25°C
Low On-Resistance:
— 39mΩ @ V
GS
= -4.5V
— 63mΩ @ V
GS
= -2.5V
Dual TSOPJW-8 Package
D1
8
Applications
•
•
•
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Top View
D1
7
D2
6
D2
5
Absolute Maximum Ratings
T
A
= 25°C, unless otherwise noted.
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
STG
1
S1
2
G1
3
S2
4
G2
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
= 150°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
Maximum Power Dissipation
1
Operating Junction Temperature Range
Storage Temperature Range
T
A
= 25°C
T
A
= 70°C
Value
-20
±12
±5
±4
±12
-1.3
1.6
1.0
-55 to 150
-55 to 150
Units
V
A
T
A
= 25°C
T
A
= 70°C
W
°C
°C
Thermal Characteristics
1
Symbol
R
θJA
R
θJA2
R
θJF
Description
Junction-to-Ambient Steady State, One FET On
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Typ
115
64
60
Max
140
78
72
Units
°C/W
°C/W
°C/W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design; however,
R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
7357.2005.04.1.0
1
AAT [ ADVANCED ANALOG TECHNOLOGY, INC. ]
