ABB Semiconductors AG
5SDA 10D2303
On-state
I
FAVM
I
FRMS
I
FSM
I
2
t
V
F0
r
F
V
F min
V
F max
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Threshold voltage
Slope resistance
On-state voltage
On-state voltage
1140 A
1790 A
13.5 kA
14.5 kA
2
910⋅10
3
A s
2
875⋅10
3
A s
Half sine wave, T
C
= 85°C
tp
tp
tp
tp
I
F
I
F
=
=
=
=
10 ms
8.3 ms
10 ms
8.3 ms
T
j
=
T
j
=
160°C
25°C
T
j
=
160°C
After surge:
V
R
≈
0V
0.83 V
0.30 mΩ
1.20 V
1.35 V
= 1000 - 3000 A
=
1800 A
Thermal
T
j
R
thJC
Storage and operating
junction temperature range
Thermal resistance
junction to case
R
thCH
Thermal resistance case to
heat sink
80 K/kW
80 K/kW
40 K/kW
16 K/kW
8 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
45
40
Z
th
35
30
25
20
15
F
m
=10...12 kN
Double Side Cooling
-40...160°C
Analytical function for transient thermal impedance:
Z
thJC
(t) =
i
R
(K/kW)
τ
i
(s)
1
20.95
0.396
∑
R
i
(1- e
i
=
1
2
10.57
0.072
3
7.15
4
-t/
τ
i
)
4
1.33
[K/kW]
10
5
0
10
-3
2
3 4 5 67
0.009
0.0044
10
-2
2
3 4 5 67
10
-1
t [s]
2
3 4 5 56
10
0
2
3 4 5 67
10
1
For a given case temperature T
c
at ambient temperature T
a
the
maximum on-state current can be calculated as follows:
I
FAVM
=
-V
F0
+
(V
F0
)
2
+
4 * f * r
f
* P
2 * f
2
*
r
f
or
2
I
FAVM
(A)
T
max
(°C)
R
thja
(K/kW)
f =
2
P (W)
T
c
(°C)
R
thJC
(K/kW)
for DC current
for half-sine wave
for 120°el., sine
for 60° el., sine
V
F0
(V)
T
a
(°C)
r
F
(Ω)
where
T
J max
- T
C
P=
R
thjc
T
J max
- T
A
P=
R
thja
1
2.5
3.1
6
Doc. No. 5SYA 1120 - 01 Apr-98
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
ABB [ THE ABB GROUP ]
