V
RSM
I
FAVM
I
FRMS
I
FSM
V
F0
r
F
=
5200 V
=
1978 A
=
3106 A
= 25.6×10
3
A
=
0.94 V
=
0.284 mΩ
Ω
Rectifier Diode
5SDD 20F5000
Doc. No. 5SYA1162-01 Jan. 03
•
Very low on-state losses
•
Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Repetetive peak reverse voltage
Characteristic values
Symbol Conditions
V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= -40...160°C
f = 5 Hz, t
p
= 10ms, T
j
= -40...160°C
min
typ
Value
5000
5200
max
50
Unit
V
V
Unit
mA
Non - repetetive peak reverse voltage V
RSM
Parameter
Max. (reverse) leakage current
Symbol Conditions
I
RRM
V
RRM
, Tj = 160°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
20
typ
22
max
24
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Pole-piece diameter
Surface creepage distance
Symbol Conditions
m
H
D
P
D
S
min
typ
0.5
26
47
max
33
Air strike distance
D
a
18
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.