V
RRM
I
FAVM
I
FRMS
I
FSM
V
F0
r
F
=
=
=
=
=
=
200 V
6130 A
9620 A
45000 A
0.80 V
0.030 mΩ
Rectifier Diode
5SDD 40B0200
Doc. No. 5SYA1154-02 July 06
•
Optimized for high current rectifiers
•
Very low on-state voltage
•
Very low thermal resistance
Blocking
V
RRM
V
RSM
I
RRM
Repetitive peak reverse voltage
Maximum peak reverse voltage
Repetitive peak reverse current
200 V
300 V
≤
50 mA
Half sine wave, t
P
= 10 ms, f = 50 Hz
Half sine wave, t
P
= 10 ms
T
j
= 170 °C
V
R
= V
RRM
Mechanical
F
M
a
Mounting force
min.
max.
Acceleration:
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
200 m/s
2
0.14 kg
4 mm
4 mm
20 kN
24 kN
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
