V
RSM
I
F(AV)M
I
F(RMS)
I
FSM
V
F0
r
F
=
=
=
=
=
=
2800
7385
11600
87×10
3
0.8
0.05
V
A
A
A
V
mΩ
Rectifier Diode
5SDD 60Q2800
Doc. No. 5SYA1161-01 Feb. 05
•
Patented free-floating silicon technology
•
Very low on-state losses
•
Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Characteristic values
Symbol Conditions
V
RRM
V
RSM
f = 50 Hz, t
p
= 10ms, T
j
= 160°C
f = 5 Hz, t
p
= 10ms, T
j
= 160°C
Value
2000
2800
Unit
V
V
Parameter
Max. (reverse) leakage current
Symbol Conditions
I
RRM
V
RRM
, Tj = 160°C
min
typ
max
400
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s
m/s
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 90 kN, T
a
= 25 °C
min
25.8
36
typ
2.1
max
26.2
Unit
kg
mm
mm
mm
Air strike distance
D
a
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
