5SDF 05D2505
On-state
(see Fig. 2, 3)
I
FAVM
I
FRMS
I
FSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
òI
2
dt
Max. surge current integral
420 A
670 A
8.5 kA
27 kA
2
0.36⋅10
6
A s
2
0.36⋅10
6
A s
Half sine wave, T
c
= 85°C
tp
tp
tp
tp
I
F
=
=
=
=
=
10 ms
1 ms
10 ms
1 ms
1000 A
Before surge:
T
c
= T
j
= 125°C
After surge:
V
R
≈
0 V
V
F
V
F0
r
F
Forward voltage drop
Threshold voltage
Slope resistance
≤
2.3 V
1.7 V
0.62 mΩ
Approximation for
I
F
= 500…3500
A
T
j
= 125°C
Turn-on
(see Fig. 4, 5)
V
fr
Peak forward recovery voltage
≤
16 V
di/dt = 500 A/µs, T
j
= 125°C
Turn-off
(see Fig. 6 to 11)
I
rr
Q
rr
E
rr
Reverse recovery current
Reverse recovery charge
Turn-off energy
≤
≤
≤
470 A
840 µC
0.34 J
di/dt = 300 A/µs,
T
j
= 125°C,
I
F
= 700 A,
V
RM
= 2300 V,
C
S
= 2µF (GTO snubber circuit)
Thermal
(see Fig. 1)
T
j
T
stg
R
thJC
Operating junction temperature range
Storage temperature range
Thermal resistance junction to case
≤
≤
≤
R
thCH
Thermal resistance case to heatsink
≤
≤
Analytical function for transient thermal impedance.
-40...125°C
-40...125°C
80 K/kW
80 K/kW
40 K/kW
16 K/kW
8 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
F
m
=
10… 12 kN
Z
thJC
(t) =
å
n
i
1
20.95
0.396
2
10.57
0.072
3
7.15
0.009
4
1.33
0.0044
R
i
(1 - e
- t /
τ
i
)
R
i
(K/kW)
i
=
1
τ
i
(s)
F
m
= 10… 12 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1114-03 Sep. 01
page 2 of 6
ABB [ THE ABB GROUP ]
