V
RRM
I
F(AV)M
I
FSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
4500
900
16×10
3
1.8
0.9
2400
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 07H4501
Doc. No. 5SYA1111-02 Oct. 06
•
Patented free-floating silicon technology
•
Low switching losses
•
Optimized for use as large-area snubber diode in GTO
converters
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Symbol Conditions
V
RRM
V
DC-link
V
DC-link
f = 50 Hz, t
p
= 10ms, T
vj
= 125°C
Ambient cosmic radiation at sea level in open
air. (100% Duty)
Ambient cosmic radiation at sea level in open
air. (5% Duty)
min
typ
Value
4500
2400
2800
Unit
V
V
V
Parameter
Repetitive peak reverse current
Symbol Conditions
I
RRM
V
R
= V
RRM
, T
vj
= 125°C
max
200
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
m
a
a
Device unclamped
Device clamped
min
36
typ
40
max
44
50
200
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H
D
S
D
a
min
26.0
30
20
typ
max
0.83
26.4
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
