V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
Dclink
=
=
=
=
=
=
4500
3000
24×10
3
2.2
0.6
2800
V
A
A
V
mΩ
Ω
V
Asymmetric Gate turn-off
Thyristor
5SGA 30J4502
Doc. No. 5SYA1202-03 Jan. 03
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Annular gate electrode
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Permanent DC voltage for
100 FIT failure rate
Characteristic values
Symbol Conditions
V
DRM
V
RRM
V
Dclink
Ambient cosmic radiation at sea level
in open air.
V
GR
≥
2 V
min
typ
max
4500
17
2800
Unit
V
V
V
Parameter
Repetitive peak off-state
current
Repetitive peak reverse
current
Symbol Conditions
I
DRM
I
RRM
V
D
= V
DRM
, V
GR
≥
2 V
V
R
= V
RRM
, R
GK
=
∞ Ω
min
typ
max
60
20
Unit
mA
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
H
m
D
s
Anode to Gate
± 0.1 mm
± 0.5 mm
min
36
min
typ
40
typ
75
26
1.3
max
44
max
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
33
Air strike distance
D
a
Anode to Gate
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
