5SHX 06F6010
Err [J]
1.5
T
j
= 115 °C
Ø
-diF /dt = 190 A/ s
1.0
VD = 3300V
TBD
0.5
0.0
0
100
200
300
400
500
600
IFGQ [A]
Fig. 13 Upper scatter range of diode turn-off energy
Fig. 14 Upper scatter range of diode turn-off energy
per pulse vs. turn-off current
per pulse vs decay rate of on-state current
Irr [A]
Tj = 115°C
diF/dt = 190 A/µs
VD = 3300 V
320
280
240
200
TBD
0
90
180
270
360
450
540
IFQ [A]
Fig. 15 Upper scatter range of diode reverse recovery
Fig. 16 Upper scatter range of diode reverse recovery
charge vs decay rate of on-state current
current vs decay rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07
page 9 of 13
ABB [ THE ABB GROUP ]
