V
DRM
I
TGQM
I
TSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
4500
630
5×10
3
1.8
2
2800
V
A
A
V
mΩ
V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 08F4510
PRELIMINARY
Doc. No. 5SYA1223-06 Aug 07
•
High snubberless turn-off rating
•
Optimized for medium frequency (<1 kHz) and
low turn-off losses
•
High reliability
•
High electromagnetic immunity
•
Simple control interface with status feedback
•
AC or DC supply voltage
•
Suitable for series connection (contact factory)
Blocking
Maximum rated values
Note 1
Parameter
Repetitive peak off-state
voltage
Permanent DC voltage for
100 FIT failure rate of
RC-GCT
Characteristic values
Symbol Conditions
V
DRM
Gate Unit energized
V
DC-link
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
min
typ
max
4500
2800
Unit
V
V
Parameter
Repetitive peak off-state
current
Symbol Conditions
I
DRM
V
D
= V
DRM
, Gate Unit energized
min
typ
max
20
Unit
mA
Mechanical data
(see Fig. 20, 21)
Maximum rated values
Note 1
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
± 0.1 mm
H
m
D
s
D
a
l
h
w
Anode to Gate
Anode to Gate
± 1.0 mm
± 1.0 mm
± 1.0 mm
min
14
min
25.9
33
13
typ
16
typ
47
max
18
max
26.4
1.01
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
Length
Height
Width IGCT
296
47
208
mm
mm
mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
