V
DRM
I
TGQM
I
TSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
6500
4200
26×10
3
2.0
0.54
4000
V
A
A
V
mΩ
V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 42L6500
PRELIMINARY
Doc. No. 5SYA1245-00 Aug 07
•
High snubberless turn-off rating
•
Wide temperature range
•
High electromagnetic immunity
•
Simple control interface with status feedback
•
AC or DC supply voltage
•
Option for series connection (contact factory)
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Rep. peak off-state voltage V
DRM
Gate Unit energized
Permanent DC voltage for V
DC-link
100 FIT failure rate of GCT
Reverse voltage
Characteristic values
min
typ
max
6500
4000
17
Unit
V
V
V
Unit
mA
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
V
RRM
min
typ
Parameter
Symbol Conditions
Rep. peak off-state current I
DRM
V
D
= V
DRM
, Gate Unit energized
max
50
Mechanical data
(see Fig. 11, 12)
1)
Maximum rated values
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
± 0.1 mm
H
m
D
s
D
a
l
h
Anode to Gate
Anode to Gate
± 1.0 mm
± 1.0 mm
min
36
min
25.3
33
10
typ
40
typ
85
max
44
max
25.8
2.9
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
Length
Height
439
40
173
mm
mm
mm
Width IGCT
w
± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
