5SLX 12L2510
200
180
25 °C
160
E
rec
[mJ], I
rr
[A], Q
rr
[µC]
140
120
I
F
[A]
100
80
60
40
20
0
0
0.5
1
V
F
[V]
1.5
2
2.5
125 °C
150
125
100
I
rr
75
Q
rr
50
E
rec
25
V
R
= 1250 V
di/dt = 440 A/µs
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 1.2 µH
50
100
I
F
[A]
150
200
0
0
Fig. 1
Typical forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
150
V
R
= 1250 V
I
F
= 100 A
di/dt = 440 A/µs
T
vj
= 125 °C
L
σ
= 1.2 µH
0
160
140
120
E
rec
[mJ], Q
rr
[µC], I
rr
[A]
100
80
60
40
Q
rr
100
-200
50
-400
0
I
F
[A]
I
R
-600
V
R
[V]
-800
-50
E
rec
I
rr
V
R
= 1250 V
I
F
= 100 A
T
vj
= 125 °C
L
σ
= 1.2 µH
0
100
200
300
400
500
600
700
800
-100
V
R
-1000
-150
-1200
20
0
di/dt [A/µs]
-200
0
1000
2000
3000
4000
time [ns]
-1400
5000
Fig. 3
Typical reverse recovery behaviour
Fig. 4
Typical reverse recovery characteristics
vs. di/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1664-02 Feb. 05
page 2 of 3
ABB [ THE ABB GROUP ]
