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Doc. No. 5SYA1619-01 July 03
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0D[LPXP UDWHG YDOXHV
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Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
Junction temperature
6\PERO &RQGLWLRQV
V
CES
I
C
I
CM
V
GES
t
psc
T
vj
V
CC
= 1300 V, V
CEM
≤
1700 V
V
GE
≤
15 V, T
vj
≤
125 °C
-40
Limited by T
vjmax
-20
V
GE
= 0 V, T
vj
≥
25 °C
PLQ
PD[
1700
75
150
20
10
150
8QLW
V
A
A
V
µs
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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