V
CE
I
C
=
=
2500 V
50 A
IGBT-Die
5SMX 12L2510
Die size: 12.4 x 12.4 mm
Doc. No. 5SYA 1622-03 Sep 05
•
•
•
•
Low loss, rugged SPT technology
Smooth switching for good EMC
Large bondable emitter area
Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
Junction temperature
1)
1)
Symbol Conditions
V
CES
I
C
I
CM
V
GES
t
psc
T
vj
V
CC
= 2000 V, V
CEM
≤
2500 V
V
GE
≤
15 V, T
vj
≤
125 °C
Limited by T
vjmax
V
GE
= 0 V
min
max
2500
50
100
Unit
V
A
A
V
µs
°C
-20
20
10
-40
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
