V
CE
I
C
=
=
1200 V
150 A
IGBT-Die
5SMX 12M1273
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA1637-00 July 06
•
Low loss thin IGBT die
•
Highly rugged SPT design
•
Large bondable emitter area
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
Junction temperature
1)
1)
Symbol Conditions
V
CES
I
C
I
CM
V
GES
t
psc
T
vj
V
CC
= 900 V, V
CEM
≤
1200 V
V
GE
≤
15 V, T
vj
≤
125 °C
Limited by T
vjmax
V
GE
= 0 V, T
vj
≥
25 °C
min
max
1200
150
300
Unit
V
A
A
V
µs
°C
-20
20
10
-40
150
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
