V
CE
I
C
=
=
6500 V
400 A
ABB HiPak
TM
IGBT Module
5SNA 0400J650100
Doc. No. 5SYA 1592-01 Jun 07
•
Low-loss, rugged SPT chip-set
•
Smooth switching SPT chip-set for
good EMC
•
High insulation package
•
AlSiC base-plate for high power
cycling capability
•
AlN substrate for low thermal
resistance
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
1)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FRM
I
FSM
t
psc
V
isol
T
vj
T
vj(op)
T
c
T
stg
M
s
Conditions
V
GE
= 0 V, T
vj
≥
25 °C
T
c
= 85 °C
t
p
= 1 ms, T
c
= 85 °C
min
max
6500
400
800
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm
-20
T
c
= 25 °C, per switch (IGBT)
20
7350
400
800
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave
V
CC
= 4400 V, V
CEM CHIP
≤
6500 V
V
GE
≤
15 V, T
vj
≤
125 °C
1 min, f = 50 Hz
-40
-40
-40
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
4
8
2
4000
10
10200
125
125
125
125
6
10
3
Junction operating temperature
Case temperature
Storage temperature
Mounting torques
1)
2)
2)
M
t1
M
t2
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
