V
CE
I
C
=
=
3300 V
800 A
ABB HiPak
TM
IGBT Module
5SNE 0800E330100
PRELIMINARY
Doc. No. 5SYA1562-01 July 07
•
Low-loss, rugged SPT chip-set
•
Smooth switching SPT chip-set for
good EMC
•
Industry standard package
•
High power density
•
AlSiC base-plate for high power
cycling capability
•
AlN substrate for low thermal
resistance
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques
1)
2)
2)
1)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FRM
I
FSM
t
psc
V
isol
T
vj
T
vj(op)
T
c
T
stg
M
s
M
t1
M
t2
Conditions
V
GE
= 0 V, T
vj
≥
25 °C
T
c
= 80 °C
t
p
= 1 ms, T
c
= 80 °C
min
max
3300
800
1600
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm
-20
T
c
= 25 °C, per switch (IGBT)
Either diode
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave, either diode
V
CC
= 2500 V, V
CEM CHIP
≤
3300 V
V
GE
≤
15 V, T
vj
≤
125 °C
t = 1 min, f = 50 Hz
-40
-40
-40
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
4
8
2
20
7700
800
1600
8000
10
6000
150
125
125
125
6
10
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
