V
CE
I
C
=
=
1200 V
300 A
IGBT Module LoPak5 SPT
5SNS 0300U120100
Doc. No. 5SYA1528-02 July 03
·
Low-loss, rugged SPT chip-set
·
Smooth switching SPT chip-set for
good EMC
·
Low profile compact baseless
package for high power cycling
capability
·
Snap-on PCB assembly
·
Integrated PTC substrate
temperature sensor
Maximum rated values
1)
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Case operating temperature
Storage temperature
Mounting torques
Symbol Conditions
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FM
I
FSM
t
psc
V
isol
T
vj
T
c(op)
T
stg
M
1
M
2
Base-heatsink, M5 screws
Main terminals, M6 screws
-40
-40
2
4
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave
V
CC
= 900 V, V
CEM CHIP
£
1200 V
V
GE
£
15 V, T
vj
£
125 °C
1 min, f = 50 Hz
T
h
= 25 °C, per switch (IGBT)
V
GE
= 0 V, T
vj
³
25 °C
T
h
= 60 °C
t
p
= 1 ms, T
h
= 60 °C
-20
min
1200
300
600
20
960
300
600
3600
10
2500
150
125
125
3
5
max
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
