V
SM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
4200 V
1920 A
3020 A
32000 A
0.96 V
0.285 mΩ
Ω
Bi-Directional Control Thyristor
5STB 18N4200
Doc. No. 5SYA1040-03 Sep. 01
•
Two thyristors integrated into one wafer
•
Patented free-floating silicon technology
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
•
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number
V
SM
V
RM
I
SM
I
RM
dV/dt
crit
V
RM
is equal to V
SM
up to T
j
= 110°C
5STB 18N4200
4200 V
4200 V
5STB 18N4000
4000 V
4000 V
≤
400 mA
≤
400 mA
1000 V/µs
5STB 18N3600
3600 V
3600 V
Conditions
f = 5 Hz, t
p
= 10ms
f = 50 Hz,t
p
= 10ms
V
SM
V
RM
T
j
= 125°C
@ Exp. to 0.67xV
SM
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2
2.9 kg
53 mm
22 mm
90 kN
81 kN
108 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
