V
SM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
6500 V
1580 A
2480 A
29700 A
1.2 V
0.458 mΩ
Ω
Bi-Directional Control Thyristor
5STB 18U6500
Doc. No. 5SYA1037-02 Apr. 02
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•
•
•
•
Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Maximum rated values
Symbol
V
SM
V
RM
I
RM
dV/dt
crit
Conditions
f = 5 Hz, t
p
= 10ms
f = 50 Hz, t
p
= 10ms
V
RM
, T
j
= 110°C
Exp. to 0.67 x V
DRM
, T
j
= 110°C
5STB 18U6500 5STB 18U6200 5STB 18U5800
6500 V
5600 V
6200 V
5300 V
≤
600 mA
2000 V/µs
5800 V
4900 V
Mechanical data
Parameter
Mounting force
Acceleration
Acceleration
Weight
Surface creepage distance
Air strike distance
Symbol Conditions
F
M
a
a
m
D
S
D
a
53
22
Device unclamped
Device clamped
3.6
min
120
typ.
135
max
160
50
100
Unit
kN
m/s
m/s
kg
mm
mm
2
2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.